Excitonic spectrum of [111] GaAs/GaxAl1xAs quantum wells

L. Viña, L. Muñoz, F. Calle, N. Mestres, J. M. Calleja, and W. I. Wang
Phys. Rev. B 46, 13234 – Published 15 November 1992
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Abstract

We have studied the magneto-optical properties of GaAs/GaxAl1xAs quantum wells grown along the [111] crystallographic direction. The excitonic spectrum has been obtained by means of photoluminescence excitation measurements in the presence of an external magnetic field. From the analysis of the data we extract the binding energies and the excitonic reduced effective masses as a function of well width. A study of the polarization of the emission, exciting with circularly polarized light, yields information about the spin relaxation and its dependence on magnetic-field strength. The results are compared with available calculations and with those obtained in samples grown along the [001] direction.

  • Received 23 April 1992

DOI:https://doi.org/10.1103/PhysRevB.46.13234

©1992 American Physical Society

Authors & Affiliations

L. Viña and L. Muñoz

  • Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Madrid, Spain
  • Departamento de Física Aplicada C-IV, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain

F. Calle

  • Escuela Técnica Superior de Ingenieros Telecomunicación, Universidad Politécnica, Ciudad Universitaria, 28040 Madrid, Spain

N. Mestres and J. M. Calleja

  • Departamento de Física Aplicada C-IV, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain

W. I. Wang

  • Electrical Engineering Department, Columbia University, New York, New York 10027
  • Center for Telecommunication Research, Columbia University, New York, New York 10027

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Vol. 46, Iss. 20 — 15 November 1992

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