Abstract
We present an experimental study of the effects of intense far-infrared (FIR) radiation on the excitonic photoluminescence (PL) from As/GaAs quantum wells. The FIR electric field was polarized parallel to the plane of undoped, 100-Å-wide As/GaAs wells. Electron-hole pairs, created by relatively weak visible pulses, were excited by FIR pulses with intensities of up to 70 kW/ at frequencies of 29.5 and 43.3 (3.7 and 5.4 meV). Both quenching and broadening of free-exciton PL peaks were observed for rms FIR field strengths above a threshold of order 100 V/cm.
- Received 26 December 1991
DOI:https://doi.org/10.1103/PhysRevB.45.9428
©1992 American Physical Society