Binding energy of a confined hydrogenic impurity in a semiconductor quantum well

We have variationally calculated the binding energy of a hydrogenic atom in an infinite semiconductor quantum well with and without an applied electric field along the growth axis. The hydrogenic ground states associated with even-parity excited quantized levels are considered. The binding-energy variation with well width is different for hydrogenic impurity ground state associated with different excited states of the well. The variation of electron energy with applied electric field is also different for different excited quantized levels. The electric-field-induced polarization is quite different for the excited quantized levels. Unlike exciton ground states, the hydrogenic ground states do not appear to be pinned when an electric field is applied.