Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields

Philippe Boring, Bernard Gil, and Karen J. Moore
Phys. Rev. B 45, 8413 – Published 15 April 1992
PDFExport Citation

Abstract

We report on studies of the optical properties of a series of (Ga,In)As-AlAs thin strained-layer multiple quantum wells and superlattices submitted to high uniaxial stress perpendicular to the growth axis of the structures. Samples having both type-I and type-II configurations for their conduction-band to valence-band potential profiles have been studied. Explanation of the experimental data has been made in the context of an envelope-function approach, which explicitly takes into account the mixing of the upper valence-band states with the split-off valence-band states. The inclusion of spin-dependent deformation potentials is necessary to interpret the values of the zero-stress energies as well as to explain their behavior as a function of the external stress.

  • Received 27 June 1991

DOI:https://doi.org/10.1103/PhysRevB.45.8413

©1992 American Physical Society

Authors & Affiliations

Philippe Boring and Bernard Gil

  • Groupe d’Etudes des Semiconducteurs, Université de Montpellier II: Sciences et Techniques du Languedoc, Case courrier 074, Place Eugène Bataillon, 34095 Montpellier CEDEX 5, France

Karen J. Moore

  • Manchester Polytechnic, Department of Mathematics and Physics, John Dalton Building, Chester Street, Manchester M15GD, England

References (Subscription Required)

Click to Expand
Issue

Vol. 45, Iss. 15 — 15 April 1992

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×