Abstract
We present an experimental study of the photoluminescence (PL) rise time of a single GaAs/As quantum well. The PL rise time is investigated as a function of the excitation energy for different temperatures at low excitation densities (≊ ). A significant slowing down of the relaxation process is observed at low temperature when exciting the quantum well at the light-hole exciton energy; the slowing down disappears as either the temperature or the excitation power is increased.
- Received 26 November 1991
DOI:https://doi.org/10.1103/PhysRevB.45.6965
©1992 American Physical Society