Simple formula for exciton binding energy in quantum wells with zero band offsets

Ian Galbraith
Phys. Rev. B 45, 6950 – Published 15 March 1992
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Abstract

Band offsets in II-VI semiconductor quantum wells can be such as to show small or zero confinement in the conduction band while having considerable confinement in the valence band, or vice versa. By assuming purely two-dimensional motion and a simple variational exciton function, we calculate an explicit analytical expression for the 1s-exciton binding energy in this case and evaluate it for a range of electron- to hole-mass ratios.

  • Received 12 November 1991

DOI:https://doi.org/10.1103/PhysRevB.45.6950

©1992 American Physical Society

Authors & Affiliations

Ian Galbraith

  • Physics Department, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom

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Vol. 45, Iss. 12 — 15 March 1992

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