Photoinduced resonant tunneling treated by an extended transfer Hamiltonian method

S. P. Apell and D. R. Penn
Phys. Rev. B 45, 6757 – Published 15 March 1992
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Abstract

A method, originally due to Heitler, is utilized to extend the transfer Hamiltonian description to resonant tunneling for the purpose of calculating transition probabilities and general frequency response characteristics of coupled systems. The scanning tunneling microscope (STM) is treated as an example of a single barrier and an irradiated quantum well as an example of a double barrier. The saturation of the contact resistance in the STM is easily derived and a simple physical explanation for the high-frequency response of an irradiated double junction is presented. In the latter case, it is found that the cutoff in the frequency response for high frequencies is limited by the optical properties of the outer electrodes of the double barrier.

  • Received 28 March 1991

DOI:https://doi.org/10.1103/PhysRevB.45.6757

©1992 American Physical Society

Authors & Affiliations

S. P. Apell

  • Institute of Theoretical Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

D. R. Penn

  • Electron Physics Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

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Vol. 45, Iss. 12 — 15 March 1992

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