Fine structures in the electroabsorption spectra of GaAs quantum wells

Guozhong Wen and Yia-Chung Chang
Phys. Rev. B 45, 6101 – Published 15 March 1992
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Abstract

We present theoretical calculations of detailed electroabsorption spectra for GaAs quantum wells, using a k-space sampling method. The valence-band mixing, excitonic effect, and Fano resonances due to the interaction of discrete exciton states with continua are all properly taken into account. Our calculation offers a direct comparison between theory and experiment. By including the coupling between states derived from the HH1 and LH1 subbands, we can account for the interesting anticrossing behavior between the 2p excited state of the HH1-CB1 exciton and ground state of the LH1-CB1 exciton, as observed by Viña et al. The agreement between experiment and our theory is quite satisfactory.

  • Received 3 September 1991

DOI:https://doi.org/10.1103/PhysRevB.45.6101

©1992 American Physical Society

Authors & Affiliations

Guozhong Wen and Yia-Chung Chang

  • Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801

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Issue

Vol. 45, Iss. 11 — 15 March 1992

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