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Exciton, heavy-hole, and electron g factors in type-I GaAs/AlxGa1xAs quantum wells

M. J. Snelling, E. Blackwood, C. J. McDonagh, R. T. Harley, and C. T. B. Foxon
Phys. Rev. B 45, 3922(R) – Published 15 February 1992
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Abstract

The magnetic g factor for n=1 heavy-hole–electron excitons in type-I GaAs/AlxGa1xAs quantum wells has been determined at 1.8 K as a function of well width (Lz) from the Zeeman splitting of the luminescence line below 2 T. Combined with previously published g-factor measurements for electrons and heavy holes this gives a complete picture of the variation of the magnitudes and signs of the three g factors. The variation of electron g factor can be understood in terms of the nonparabolicity of the conduction band of GaAs using three-band kp perturbation theory, but that of the hole and exciton g factors is not reproduced by existing theory, implying a well width dependence of the Luttinger parameters κ and q.

  • Received 9 December 1991

DOI:https://doi.org/10.1103/PhysRevB.45.3922

©1992 American Physical Society

Authors & Affiliations

M. J. Snelling, E. Blackwood, C. J. McDonagh, and R. T. Harley

  • Department of Physics, Southampton University, Southampton, United Kingdom

C. T. B. Foxon

  • Physics Department, Nottingham University, Nottingham, United Kingdom

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Issue

Vol. 45, Iss. 7 — 15 February 1992

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