Properties of thin strained layers of GaAs grown on InP

M.-E. Pistol, M. Gerling, D. Hessman, and L. Samuelson
Phys. Rev. B 45, 3628 – Published 15 February 1992
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Abstract

Single strained layers of GaAs grown on InP have been studied by a variety of optical experiments. Raman spectroscopy shows the strain-shifted LOΓ phonon, thus proving that the layers are strained. The photoluminescence is strong, allowing photoluminescence excitation spectroscopy to be performed in a diamond-anvil cell. The absorption is found to increase slowly close to the threshold. A theory of absorption in type-II quantum wells is used in order to compare with experiment. Photoconductivity and modulated-reflectance experiments have been carried out on the samples and indications of the presence of heavy-hole states are seen. The strain Hamiltonian of the valence band has been transformed into a 6×6 matrix, which is parametrized by the strain-tensor elements, allowing easy calculation of the strain shift of the band edges even in unusual strain situations. The experimental results are consistent with a marginally type-II structure in which the holes are confined to the GaAs layer but the electrons reside in the InP layers.

  • Received 21 June 1991

DOI:https://doi.org/10.1103/PhysRevB.45.3628

©1992 American Physical Society

Authors & Affiliations

M.-E. Pistol, M. Gerling, D. Hessman, and L. Samuelson

  • Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden

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Vol. 45, Iss. 7 — 15 February 1992

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