Confinement of excitons in quantum dots

G. T. Einevoll
Phys. Rev. B 45, 3410 – Published 15 February 1992
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Abstract

A theoretical study of exciton confinement in small CdS and ZnS quantum dots is reported. In our calculational scheme the hole is described by an effective bond-orbital model that accounts for the valence-band degeneracy in bulk semiconductors. The electron is described with a single-band effective-mass approximation. The confining quantum-dot potentials for the hole and electron are modeled as spherically symmetric potential wells with finite barrier heights. The electron-hole Coulomb attraction is included, and exciton energies are obtained variationally in an iterative Hartree scheme. Exciton energies for dot diameters in the range 10–80 Å are calculated and compared with experimental data and other theoretical results.

  • Received 25 June 1991

DOI:https://doi.org/10.1103/PhysRevB.45.3410

©1992 American Physical Society

Authors & Affiliations

G. T. Einevoll

  • Institutt for Fysikk, Norges Tekniske Ho/gskole, Universitetet i Trondheim, N-7034 Trondheim, Norway

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Vol. 45, Iss. 7 — 15 February 1992

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