Energy relaxation of hot two-dimensional excitons in a GaAs quantum well by exciton-phonon interaction

P. K. Basu and Partha Ray
Phys. Rev. B 45, 1907 – Published 15 January 1992
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Abstract

The power loss of hot two-dimensional excitons in GaAs/AlxGa1xAs multiple quantum wells and the corresponding energy relaxation times are calculated in the present work. A simplified variational envelope function is assumed for the 1s excitonic level in an infintely deep well and the exciton distribution is described by an effective exciton temperature. For deformation-potential acoustic-phonon scattering, a simple expression for the power loss derived by Takagahara is used, while for polar-optic-phonon scattering the expression is developed in the present paper. The calculated values indicate that for lattice and exciton temperatures below 150 K, polar-optic-phonon scattering contributes little to the power loss. The energy relaxation time due to the acoustic-phonon scattering is found to be about 3–4 times higher than the experimental estimate and hence the higher-lying states have to be considered to obtain enhanced energy relaxation rate.

  • Received 9 August 1991

DOI:https://doi.org/10.1103/PhysRevB.45.1907

©1992 American Physical Society

Authors & Affiliations

P. K. Basu and Partha Ray

  • Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Calcutta 700 009, India

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Issue

Vol. 45, Iss. 4 — 15 January 1992

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