Ground-state energies of one- and two-electron silicon dots in an amorphous silicon dioxide matrix

Davorin Babić, Raphael Tsu, and Richard F. Greene
Phys. Rev. B 45, 14150 – Published 15 June 1992
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Abstract

The one- and two-electron ground-state energies of a silicon sphere embedded in an amorphous silicon dioxide matrix are calculated as a function of the sphere size. The electron-electron interaction and polarization effects are treated by perturbation; our quantum-mechanical calculation is valid for small spheres with radii between 10 and 40 Å. For large spheres, classical electrostatics is used. A universal effective capacitance is defined in terms of the difference in the ground-state energies of the (n+1)- and n-electron cases, which agrees with the usual concept of capacitance in the classical limit.

  • Received 30 October 1991

DOI:https://doi.org/10.1103/PhysRevB.45.14150

©1992 American Physical Society

Authors & Affiliations

Davorin Babić, Raphael Tsu, and Richard F. Greene

  • University of North Carolina at Charlotte, Charlotte, North Carolina 28223

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Issue

Vol. 45, Iss. 24 — 15 June 1992

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