Effects of the exciton continuum on resonant Raman scattering in GaAs quantum wells

Guozhong Wen and Yia-Chung Chang
Phys. Rev. B 45, 13562 – Published 15 June 1992
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Abstract

The effect of the exciton continuum on resonant Raman scattering in GaAs quantum wells is investigated. A k-space sampling technique is used to deal with exciton states, including the effects of valence-band mixing. Discrete and continuum exciton states are included in our calculation. We find that the resonant Raman spectra so obtained are in much better agreement with experiment compared with those that do not include the exciton continuum states.

  • Received 3 January 1992

DOI:https://doi.org/10.1103/PhysRevB.45.13562

©1992 American Physical Society

Authors & Affiliations

Guozhong Wen and Yia-Chung Chang

  • Department of Physics and Materials Research Laboratories, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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Issue

Vol. 45, Iss. 23 — 15 June 1992

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