Modulated reflectivity spectrum of strained ZnSe/Zn1xCdxSe/ZnSe single quantum wells

R. G. Alonso, C. Parks, A. K. Ramdas, H. Luo, N. Samarth, J. K. Furdyna, and L. R. Ram-Mohan
Phys. Rev. B 45, 1181 – Published 15 January 1992
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Abstract

The piezo- and electromodulated spectra of ZnSe/Zn0.84Cd0.16Se/ZnSe single quantum wells, grown by molecular-beam epitaxy on (001) GaAs substrates, exhibit features associated with transitions between quantum confined levels. The transition energies are consistent with a theoretical model based on the kp formalism and the transfer-matrix method. An unusually large (∼40 meV) heavy-hole–light-hole splitting is observed in these quantum wells. The theoretical model accounts for the large splitting in terms of the strain arising from the lattice mismatch between the layers forming the quantum well. An excitonic model has been used successfully to account for the line shape of the spectral features.

  • Received 3 September 1991

DOI:https://doi.org/10.1103/PhysRevB.45.1181

©1992 American Physical Society

Authors & Affiliations

R. G. Alonso, C. Parks, and A. K. Ramdas

  • Department of Physics, Purdue University, West Lafayette, Indiana 47907

H. Luo, N. Samarth, and J. K. Furdyna

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

L. R. Ram-Mohan

  • Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609

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Vol. 45, Iss. 3 — 15 January 1992

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