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Density-dependent exciton radiative lifetimes in GaAs quantum wells

R. Eccleston, B. F. Feuerbacher, J. Kuhl, W. W. Rühle, and K. Ploog
Phys. Rev. B 45, 11403(R) – Published 15 May 1992
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Abstract

Resonant photoexcitation of a predominantly homogeneously broadened exciton line in a GaAs quantum well results in a nonexponential time-resolved photoluminescence decay transient due to the decrease in the exciton-exciton scattering contribution to the homogeneous linewidth, Γh, as the exciton population decays. This result confirms the theoretically predicted relationship between the exciton radiative recombination lifetime and the homogenous linewidth (and coherence area) of the exciton state.

  • Received 25 February 1992

DOI:https://doi.org/10.1103/PhysRevB.45.11403

©1992 American Physical Society

Authors & Affiliations

R. Eccleston, B. F. Feuerbacher, J. Kuhl, W. W. Rühle, and K. Ploog

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Germany

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Vol. 45, Iss. 19 — 15 May 1992

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