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Stimulated emission induced by two-photon absorption in GaAs quantum wells

C. Moro, M. Lepore, R. Cingolani, R. Tommasi, M. Ferrara, I. M. Catalano, K. Ploog, and A. Fischer
Phys. Rev. B 44, 8384(R) – Published 15 October 1991
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Abstract

We report evidence of stimulated emission induced by two-photon optical pumping in properly designated GaAs/AlxGa1xAs multiple quantum wells. The two-photon absorption coefficient is measured in order to evaluate the electron-hole pair density photogenerated in the crystal around the stimulated emission threshold. The determined threshold electron-hole density of np=3×1011 cm2 is in good agreement with the value reported for one-photon excitation.

  • Received 22 May 1991

DOI:https://doi.org/10.1103/PhysRevB.44.8384

©1991 American Physical Society

Authors & Affiliations

C. Moro, M. Lepore, R. Cingolani, R. Tommasi, M. Ferrara, and I. M. Catalano

  • Dipartimento di Fisica, Universitá di Bari, via Amendola 173, I-70126 Bari, Italy

K. Ploog and A. Fischer

  • Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany

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Vol. 44, Iss. 15 — 15 October 1991

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