Abstract
A technique has been developed that allows the energy profile of quantum wells in As heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons.
- Received 6 June 1991
DOI:https://doi.org/10.1103/PhysRevB.44.6340
©1991 American Physical Society