Theory of single-electron charging of quantum wells and dots

D. V. Averin, A. N. Korotkov, and K. K. Likharev
Phys. Rev. B 44, 6199 – Published 15 September 1991
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Abstract

Single-electron charging effects similar to those in small-area metallic tunnel junctions should take place in semiconductor heterostructures, in particular, small-area quantum wells. Our analysis shows that dc current-voltage characteristics of such a well should exhibit an interplay between single-electron charging and energy-quantization effects. Relative magnitude of the single-electron charging effects is determined by the same parameter which scales multielectron charging in the conventional (large-area) quantum wells.

  • Received 16 April 1991

DOI:https://doi.org/10.1103/PhysRevB.44.6199

©1991 American Physical Society

Authors & Affiliations

D. V. Averin

  • Department of Physics, Moscow State University, Moscow 1198 99 GSP, U.S.S.R.

A. N. Korotkov

  • Institute of Nuclear Physics, Moscow State University, Moscow 119 899 GSP, U.S.S.R.

K. K. Likharev

  • Department of Physics, Moscow State University, Moscow 119 899 GSP, U.S.S.R.
  • Department of Applied Physics, Delft University of Technology, 2600 GA Delft, The Netherlands

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Vol. 44, Iss. 12 — 15 September 1991

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