• Rapid Communication

Effect of valence-subband structure on the energy relaxation dynamics of electrons in GaAs quantum wells grown on Si

Kai Shum, Y. Takiguchi, J. M. Mohaidat, R. R Alfano, K. Adomi, and H. Morkoc
Phys. Rev. B 44, 4044(R) – Published 15 August 1991
PDFExport Citation

Abstract

Different electron energy relaxation dynamics are observed in narrow and wide modulation Be-doped GaAs-AlxGa1xAs multiple quantum wells grown on Si substrates (GaAs QW’s/Si) arising from different valence-subband structure. The combination of built-in biaxial stress and spatial hole confinement results in a reversal of light- and heavy-hole subbands in narrow GaAs QW’s/Si structures. For narrow (wide) quantum-well structures of 40 (188) Å at 4.3 K in which there is a two-dimensional light- (heavy-) hole gas, the energy-loss process of photoexcited hot electrons is extremely rapid (slow) due to strong (weak) energy exchange with the cool light (heavy) holes. The nonequilibrium phonon population was found to build up from the relaxation of hot electrons in the 188-Å wells but not in the 40-Å wells.

  • Received 3 June 1991

DOI:https://doi.org/10.1103/PhysRevB.44.4044

©1991 American Physical Society

Authors & Affiliations

Kai Shum, Y. Takiguchi, J. M. Mohaidat, and R. R Alfano

  • Institute for Ultrafast Spectroscopy and Lasers, Electrical Engineering Department and Department of Physics, The City College of New York, New York, New York 10031

K. Adomi and H. Morkoc

  • Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801

References (Subscription Required)

Click to Expand
Issue

Vol. 44, Iss. 8 — 15 August 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×