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Landau-level pinning in wide modulation-doped quantum-well structures in the integer quantum Hall regime

D. G. Hayes, M. S. Skolnick, D. M. Whittaker, P. E. Simmonds, L. L. Taylor, S. J. Bass, and L. Eaves
Phys. Rev. B 44, 3436(R) – Published 15 August 1991
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Abstract

Pinning effects between Landau levels in the two-dimensional electron gases on opposite sides of an asymmetric, wide quantum well in high magnetic field are reported. The process is driven by the renormalization of the potential when charge is transferred to maintain equilibrium between discrete-Landau-level densities of states. Self-consistent Hartree calculations successfully predict the pinning and many of the anomalous features observed in magnetoluminescence and magnetotransport.

  • Received 22 May 1991

DOI:https://doi.org/10.1103/PhysRevB.44.3436

©1991 American Physical Society

Authors & Affiliations

D. G. Hayes, M. S. Skolnick, D. M. Whittaker, P. E. Simmonds, L. L. Taylor, and S. J. Bass

  • Electronics Division of the Defence Research Agency, Malvern, Worcestershire WR14 3PS, United Kingdom

L. Eaves

  • Department of Physics, University of Nottingham, Nottingham, NG7 2RD, United Kingdom

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Issue

Vol. 44, Iss. 7 — 15 August 1991

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