Direct determination of the electron-tunneling escape time from a GaAs/AlxGa1xAs quantum well by transient-capacitance spectroscopy

E. Martinet, E. Rosencher, F. Chevoir, J. Nagle, and P. Bois
Phys. Rev. B 44, 3157 – Published 15 August 1991
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Abstract

We show that the tunnel emission of electrons out of a single quantum well into an AlxGa1xAs conduction band under a perpendicular electric field can be observed by transient-capacitance spectroscopy in the 0.1–100-ms time range. This has been made possible by the use of a semiconductor-insulator-semiconductor-type structure where the GaAs space-charge probe region is separated from the quantum well by a thin AlxGa1xAs barrier. The variation of the tunneling time with applied electric field is in good agreement with a simple Fowler-Nordheim model. The absolute values of the tunneling time are, however, significantly different from the expected theoretical values. The origin of this discrepancy is briefly discussed.

  • Received 7 February 1991

DOI:https://doi.org/10.1103/PhysRevB.44.3157

©1991 American Physical Society

Authors & Affiliations

E. Martinet, E. Rosencher, F. Chevoir, J. Nagle, and P. Bois

  • Laboratoire Central de Recherches, Thomson-CSF, Domaine de Corbeville, 91404 Orsay, CEDEX, France

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Vol. 44, Iss. 7 — 15 August 1991

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