Quasi-Fermi-levels in quantum-well photoluminescence

The nonequilibrium quasi-Fermi-levels of electrons and holes in quantum wells are calculated during photoluminescence. It is assumed the electrons and holes are created by continuous laser excitation. Various recombination processes are included: electron radiative recombination with holes bound at neutral acceptors, electron radiative recombination with free holes, hole trapping at ionized acceptors, and Auger decay. A numerical example is presented for acceptors in GaAs/${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells.