Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1xAs quantum-well structures

M. Gurioli, A. Vinattieri, M. Colocci, C. Deparis, J. Massies, G. Neu, A. Bosacchi, and S. Franchi
Phys. Rev. B 44, 3115 – Published 15 August 1991
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Abstract

We report an experimental study of the photoluminescence (PL) properties, after both picosecond and continuous-wave excitation, of GaAs/AlxGa1xAs quantum-well structures. The comparison between the PL decay time and the PL integrated intensity allows us to determine the temperature dependence of both the radiative and the nonradiative time constants. We find that the nonradiative processes play an important role and become dominant for T≥100 K. The radiative time constant turns out to be definitely higher than the measured PL decay time and increases by several orders of magnitude as the temperature is raised from T=4 K to room temperature. The experimental results are finally compared with the theories existing in the literature.

  • Received 12 February 1991

DOI:https://doi.org/10.1103/PhysRevB.44.3115

©1991 American Physical Society

Authors & Affiliations

M. Gurioli, A. Vinattieri, and M. Colocci

  • Dipartimento di Fisica and Laboratorio Europeo di Spettroscopie Non Lineari , Università degli Studi di Firenze, Largo Enrico Fermi 2 50125 Firenze, Italy

C. Deparis, J. Massies, and G. Neu

  • Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Sophia Antipolis, 06560 Valbonne, France

A. Bosacchi and S. Franchi

  • Consiglio Nazionale delle Ricerche, Maspec Institute, 43100 Parma, Italy

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Vol. 44, Iss. 7 — 15 August 1991

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