Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structures

R. Binder, I. Galbraith, and S. W. Koch
Phys. Rev. B 44, 3031 – Published 15 August 1991
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Abstract

A theoretical analysis of the many-body effects in the band-edge absorption spectra of highly excited type-I and type-II semiconductor quantum-well structures is presented. The situation of a homogeneous electron-hole plasma in a usual type-I structure is compared and contrasted to the situation in a type-II structure, where the electron and hole plasmas are spatially separated into adjacent layers. The plasma effects are determined through numerical solutions of a generalized Wannier equation, which accounts for dynamical exchange and screening effects as well as Pauli blocking. In the description of dynamical screening, an alternative to the so-called Shindo approximation is developed. The induced electric-field effects in the type-II systems are investigated by solving the coupled Schrödinger and Poisson equations for the charge carriers.

  • Received 15 April 1991

DOI:https://doi.org/10.1103/PhysRevB.44.3031

©1991 American Physical Society

Authors & Affiliations

R. Binder, I. Galbraith, and S. W. Koch

  • Optical Sciences Center and Physics Department, University of Arizona, Tucson, Arizona 85721

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Issue

Vol. 44, Iss. 7 — 15 August 1991

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