Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells

D. C. Reynolds, K. R. Evans, C. E. Stutz, and P. W. Yu
Phys. Rev. B 44, 1839 – Published 15 July 1991
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Abstract

The well-width dependence of the binding energy (EBE) of excitons to neutral donors in high-quality, narrow, pseudomorphic In0.1Ga0.9As/GaAs single-quantum-well structures was obtained via low-temperature photoluminescence measurements. It is observed that EBE varies smoothly with well widths for wells that vary from two monolayers (5.7 Å) to ten monolayers (28.5 Å) in width. The results are understood on the basis of simple physical arguments. Additionally, a previously unobserved transition was found for both undoped and donor-doped, two-monolayer-wide In0.1Ga0.9As/GaAs quantum wells. This transition is identified with a bound-to-bound transition and is shown to have a significantly faster time-resolved photoluminescence response than those of both the heavy-hole–free-excitonic and neutral-donor–bound-excitonic transitions.

  • Received 19 December 1990

DOI:https://doi.org/10.1103/PhysRevB.44.1839

©1991 American Physical Society

Authors & Affiliations

D. C. Reynolds

  • University Research Center, Wright State University, Dayton, Ohio 45435

K. R. Evans and C. E. Stutz

  • Wright Research and Development Center, Electronic Technology Laboratory (WRDC/EL), Wright-Patterson Air Force Base, Ohio 45433

P. W. Yu

  • University Research Center, Wright State University, Dayton, Ohio 45435

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Vol. 44, Iss. 4 — 15 July 1991

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