Abstract
Resonant tunneling involving discrete quantum states in microcrystalline-Si (μc-Si) with a- barriers is observed experimentally. The low interface trap densities, and the high barrier height between Si and a-, allow the observation of several aspects in the physics of quantum confinement. Even for extreme quantum confinement at low gate bias, applied to the Al/a-/μc-Si/a-/c-Si structure, the effects of quantized charge accumulation dominate over the wider separation of the energy levels of the quantum box. At high gate bias, we observe a transition from a three dimensionally to a one dimensionally confined system.
- Received 6 February 1991
DOI:https://doi.org/10.1103/PhysRevB.44.1806
©1991 American Physical Society