Many-body effects of a dense two-dimensional electron-hole system in a strained InxGa1xAs quantum well

L. V. Butov, V. D. Kulakovskii, and T. G. Andersson
Phys. Rev. B 44, 1692 – Published 15 July 1991
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Abstract

The photoluminescence (PL) of a dense quasi-two-dimensional (quasi-2D) electron-hole (e-h) system in a strained InxGa1xAs quantum well (QW) has been investigated. The QW is part of a selectively doped n-type AlyGa1yAs/InxGa1xAs/GaAs heterostructure and PL measurements are made at excitation intensities up to 105 W/cm2 in a magnetic field, H≤8.4 T. A strong change in the emission spectra associated with many-body effects is found under conditions when the density of the photoexcited e-h pairs becomes comparable to or higher than that of the initial equilibrium electron concentration due to selective doping (∼1012 cm2). The damping of one-particle states is found to be a nonlinear function of energy (calculated from the Fermi level) and also depends on the e-h-pair density and the subband number. A common approximation of the rigid band shift in the dense plasma is found to be crude. The change in the effective mass due to the many-body effects, as high as 15%, has been discovered in addition to the band-gap renormalization.

  • Received 15 June 1990

DOI:https://doi.org/10.1103/PhysRevB.44.1692

©1991 American Physical Society

Authors & Affiliations

L. V. Butov and V. D. Kulakovskii

  • Solid State Physics Institute, U.S.S.R. Academy of Sciences, Chernogolovka, Moscow District 142 432, U.S.S.R.

T. G. Andersson

  • Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

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Issue

Vol. 44, Iss. 4 — 15 July 1991

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