Electroabsorption properties of a single GaAs quantum well

C. M. Herzinger, P. D. Swanson, T. K. Tang, T. M. Cockerill, L. M. Miller, M. E. Givens, T. A. DeTemple, J. J. Coleman, and J. P. Leburton
Phys. Rev. B 44, 13478 – Published 15 December 1991
PDFExport Citation

Abstract

Data are presented on the electroabsorption spectra of a single 10-nm GaAs quantum well bounded within Al0.2Ga0.8As under conditions for which the excitonic features are unresolved. Over an electric-field range of 100–500 kV/cm, the spectra are bounded by two- and three-dimensional electroabsorption limits. The three-dimensional limit occurs because of strong tunnel coupling to the continuum states, resulting in lifetime broadening of the transitions. Model studies using the one-electron-overlap-integral picture confirm this behavior and predict absorption coefficients and spectra in reasonable agreement with the data. Estimates of the high-field lifetime suggest that use of this mechanism for a practical modulator would reduce some of the intensity and recovery-time limitations of traditional exciton-based modulators.

  • Received 22 July 1991

DOI:https://doi.org/10.1103/PhysRevB.44.13478

©1991 American Physical Society

Authors & Affiliations

C. M. Herzinger, P. D. Swanson, T. K. Tang, T. M. Cockerill, L. M. Miller, M. E. Givens, T. A. DeTemple, J. J. Coleman, and J. P. Leburton

  • Department of Electrical and Computer Engineering, University of Illinois, 1406 West Green Street, Urbana, Illinois 61801
  • Engineering Research Center for Compound Semiconductor Microelectronics, 1406 West Green Street, Urbana, Illinois 61801

References (Subscription Required)

Click to Expand
Issue

Vol. 44, Iss. 24 — 15 December 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×