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Electric-field effects on confined hydrogenic impurities in semiconductors

Byungsu Yoo, B. D. McCombe, and W. Schaff
Phys. Rev. B 44, 13152(R) – Published 15 December 1991
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Abstract

We report the observation of electric-field effects on the electronic states of shallow impurities confined in semiconductor quantum wells. As p-‘‘i’’-n diode structure was used to produce the controllable electric field, and the states of donors doped in the well center were monitored by far-infrared magnetospectroscopy. A broadened, impurity-related peak is observed, which changes signficantly both in shape and in position with electric field. Observed shifts and changes in the line profile are in good agreement with a variational calculation that incorporates the impurity distribution within the well.

  • Received 9 September 1991

DOI:https://doi.org/10.1103/PhysRevB.44.13152

©1991 American Physical Society

Authors & Affiliations

Byungsu Yoo and B. D. McCombe

  • State University of New York at Buffalo, Buffalo, New York 14260

W. Schaff

  • Cornell University, Ithaca, New York 14853

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Issue

Vol. 44, Iss. 23 — 15 December 1991

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