Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers

T. W. Kim, J. I. Lee, K. N. Kang, K-S. Lee, and K-H. Yoo
Phys. Rev. B 44, 12891 – Published 15 December 1991
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Abstract

Shubnikov–de Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikov–de Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.

  • Received 1 July 1991

DOI:https://doi.org/10.1103/PhysRevB.44.12891

©1991 American Physical Society

Authors & Affiliations

T. W. Kim

  • Department of Physics, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Ku, Seoul 139-050, Korea

J. I. Lee and K. N. Kang

  • Optical Electronics Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea

K-S. Lee

  • Quantum Materials Research Laboratory, Frontier Research Program, The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan

K-H. Yoo

  • Quantum Physics Laboratory, Korea Standard Research Institute, Daejon 305-606, Korea

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Vol. 44, Iss. 23 — 15 December 1991

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