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Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass

H. Hosono, Y. Abe, H. Imagawa, H. Imai, and K. Arai
Phys. Rev. B 44, 12043(R) – Published 1 December 1991
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Abstract

We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×1017 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.

  • Received 29 July 1991

DOI:https://doi.org/10.1103/PhysRevB.44.12043

©1991 American Physical Society

Authors & Affiliations

H. Hosono and Y. Abe

  • Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan

H. Imagawa

  • Department of Applied Chemistry, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan

H. Imai and K. Arai

  • Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan

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Issue

Vol. 44, Iss. 21 — 1 December 1991

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