Infrared magneto-optical and photoluminescence studies of the electronic properties of In(As,Sb) strained-layer superlattices

Long-wavelength magnetotransmission and photoluminescence measurements were performed on ${\mathrm{InAs}}_{0.13}$${\mathrm{Sb}}_{0.87}$/InSb strained-layer superlattices (SLS’s). The energies and reduced effective masses of several interband optical transitions were obtained from these experiments. SLS’s with different layer thicknesses produced self-consistent results. With these data, the type-II band offset and band-edge strain-shift parameters were accurately determined. Consistent with a type-II offset, an extremely small, in-plane effective-mass hole ground state was observed, thus proving that the hole quantum well is located in the biaxially compressed, InSb layer. Nonparabolicity, suggesting valence-band anticrossing, was also observed.