Abstract
A variational calculation of the ground state of shallow donors and acceptors in triangular GaAs quantum wells is presented. This is connected to the properties of hydrogenic impurities in sawtooth-doped (or δ-doped n-i-p-i) superlattices. The binding energy, lateral extension, and vertical extension are calculated as functions of the impurity position in the well and δ-doping concentration.
- Received 22 February 1991
DOI:https://doi.org/10.1103/PhysRevB.44.11231
©1991 American Physical Society
