Field-dependent electronic noise of lightly doped p-type Si at 77 K

A theoretical investigation and experiments on the noise spectra of lightly doped p-type Si (boron) at 77 K are presented. Noise spectra in the high-frequency range 0.22≤f≤10.5 GHz have been measured at different electric fields 100≤E≤2500 V/cm for two acceptor concentrations ${\mathit{N}}_{\mathit{A}}$ of 4×${10}^{14}$ and 3×${10}^{15}$ ${\mathrm{cm}}^{\mathrm{-}3}$. The experimental results are interpreted within a Monte Carlo simulation, which includes at a microscopic level the mechanism of generation and recombination from impurity centers. The different sensitivity on the parameters in fitting first- and second-order transport coefficients is shown to provide a formidable check to support the physical plausibility of the model used.