‘‘Spin’’-flip scattering of holes in semiconductor quantum wells

R. Ferreira and G. Bastard
Phys. Rev. B 43, 9687 – Published 15 April 1991
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Abstract

We report results of calculations on the ‘‘spin’’-flip relaxation time of holes in semiconductor quantum wells due to hole interaction with static scatterers such as ionized impurities, alloy fluctuations, and s-d exchange (in the case of quantum wells based on diluted magnetic semiconductors). We show that size quantization along the growth axis leads to a drastic quenching of the ‘‘spin’’-flip scattering. This results in hole ‘‘spin’’-flip relaxation times, which can be much longer than the recombination time when the hole in-plane kinetic energy is small compared with the HH1-LH1 separation distance.

  • Received 14 June 1990

DOI:https://doi.org/10.1103/PhysRevB.43.9687

©1991 American Physical Society

Authors & Affiliations

R. Ferreira and G. Bastard

  • Laboratoire de Physique de la Matière Condensée de l’Ecole Normale Supérieure, 24 rue Lhomond, F-75005 Paris, CEDEX 05, France

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Vol. 43, Iss. 12 — 15 April 1991

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