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Influence of barrier height on carrier dynamics in strained InxGa1xAs/GaAs quantum wells

G. Bacher, H. Schweizer, J. Kovac, A. Forchel, H. Nickel, W. Schlapp, and R. Lösch
Phys. Rev. B 43, 9312(R) – Published 15 April 1991
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Abstract

Strained InxGa1xAs/GaAs heterostructures with different In content x, each containing quantum wells with various well widths Lz (between 2 and 30 nm) are investigated with use of time-integrated and time-resolved spectroscopy. With increasing temperature, a characteristic drop of both the photoluminescence (PL) intensity and PL lifetime is observed, revealing a strong dependence on In content and well width. The temperature dependencies can be explained by thermal emission of the carriers out of rather shallow quantum wells. The transfer of the carriers between quantum wells of different widths across the GaAs barrier is demonstrated and described by a system of rate equations.

  • Received 19 November 1990

DOI:https://doi.org/10.1103/PhysRevB.43.9312

©1991 American Physical Society

Authors & Affiliations

G. Bacher, H. Schweizer, J. Kovac, and A. Forchel

  • IV. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany

H. Nickel, W. Schlapp, and R. Lösch

  • Deutsche Bundespost-Telekom, Research Institut, P.O. Box 100 030, D-6100 Darmstadt, Federal Republic of Germany

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Issue

Vol. 43, Iss. 11 — 15 April 1991

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