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Difference phonon scattering: A Raman excitation in GaAs quantum wells

Y. Liu, R. Sooryakumar, Emil S. Koteles, and B. Elman
Phys. Rev. B 43, 6832(R) – Published 15 March 1991
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Abstract

We report on a triply resonant fourth-order Raman excitation in single GaAs quantum wells as narrow as 7 monolayers. The scattering, observed at about 3 meV, is a direct manifestation of extreme resonant inter-valence-subband coupling of confined TO and LO phonons. The peak is associated with difference scattering of these optical phonons via deformation-potential-mediated electron-phonon coupling in the laminar structure. Uniaxial stress provides an excellent means to modify the hole states and thus directly control the Raman activity of this excitation.

  • Received 12 November 1990

DOI:https://doi.org/10.1103/PhysRevB.43.6832

©1991 American Physical Society

Authors & Affiliations

Y. Liu and R. Sooryakumar

  • Department of Physics, The Ohio State University, Columbus, Ohio 43210

Emil S. Koteles and B. Elman

  • GTE Laboratoires Incorporated, Waltham, Massachusetts 02254

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Vol. 43, Iss. 8 — 15 March 1991

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