Abstract
We report on a triply resonant fourth-order Raman excitation in single GaAs quantum wells as narrow as 7 monolayers. The scattering, observed at about 3 meV, is a direct manifestation of extreme resonant inter-valence-subband coupling of confined TO and LO phonons. The peak is associated with difference scattering of these optical phonons via deformation-potential-mediated electron-phonon coupling in the laminar structure. Uniaxial stress provides an excellent means to modify the hole states and thus directly control the Raman activity of this excitation.
- Received 12 November 1990
DOI:https://doi.org/10.1103/PhysRevB.43.6832
©1991 American Physical Society