Transient many-body effects in the semiconductor optical Stark effect: A numerical study

R. Binder, S. W. Koch, M. Lindberg, W. Schäfer, and F. Jahnke
Phys. Rev. B 43, 6520 – Published 15 March 1991
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Abstract

A comprehensive numerical study of the optical Stark effect and associated phenomena in semiconductors is presented. The results are obtained from numerical solutions of the full semiconductor Bloch equations for bulk and quantum-well structures. Coherent oscillations, the optical Stark effect, and adiabatic following, i.e., ultrafast bleaching and recovery of the exciton, are discussed. The relative importance of the different contributions in the semiconductor Bloch equations is identified. Optical-absorption spectra are computed for different exciton dephasing models and a large variety of pump-probe excitation parameters.

  • Received 10 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.6520

©1991 American Physical Society

Authors & Affiliations

R. Binder, S. W. Koch, and M. Lindberg

  • Optical Sciences Center and Physics Department, University of Arizona, Tucson, Arizona 85721

W. Schäfer and F. Jahnke

  • Forschungszentrum Jülich, HLRZ, D-5170 Jülich, Germany

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Vol. 43, Iss. 8 — 15 March 1991

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