Effect of the X point on the escape of electrons from the quantum well of a double-barrier heterostructure

M. K. Jackson, D. Z. -Y. Ting, D. H. Chow, D. A. Collins, J. R. Söderström, and T. C. McGill
Phys. Rev. B 43, 4856 – Published 15 February 1991
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Abstract

We describe a photoluminescence study of a series of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures. We report the observation in double-barrier heterostructures of photoluminescence from the recombination of electrons at X-point levels localized in the AlAs barriers, with heavy holes localized in the GaAs quantum well. As the quantum-well width is decreased, the increasing confinement energy of the Γ-point electron level in the quantum well results in increasing interaction with the X-point levels in the barriers. As the well width is decreased, the integrated Γ-point photoluminescence intensity decreases, and then increases just before the Γ-X crossover; further decrease in the well width results in monotonic decrease of intensity. This behavior is consistent with eight-band tight-binding calculations of the Γ-point electron quasi-bound-state lifetime.

  • Received 24 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.4856

©1991 American Physical Society

Authors & Affiliations

M. K. Jackson, D. Z. -Y. Ting, D. H. Chow, D. A. Collins, J. R. Söderström, and T. C. McGill

  • Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125

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Vol. 43, Iss. 6 — 15 February 1991

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