Electric-field effects of the excitons in asymmetric triangular AlxGa1xAs-GaAs quantum wells

P. W. Yu, D. C. Reynolds, G. D. Sanders, K. K. Bajaj, C. E. Stutz, and K. R. Evans
Phys. Rev. B 43, 4344 – Published 15 February 1991
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Abstract

Photocurrent spectroscopy of asymmetric triangular quantum wells in an electric field perpendicular to the heterointerface is used to study exciton transition energy and oscillator strength under electric fields ranging from -105 to +105 V/cm. The transition energy and oscillator strength strongly depend on the field direction and magnitude. The lowest-lying heavy- and light-hole excitons show linear Stark shifts that are small compared with that of the corresponding rectangular well. A large energy shift is seen for the transition of the n=2 electron subband to m=1 heavy-hole subband in the negative-field region. The results of our experiment are in good agreement with a theoretical calculation based on a multiband effective-mass approach, which incorporates valence-band mixing.

  • Received 9 August 1990

DOI:https://doi.org/10.1103/PhysRevB.43.4344

©1991 American Physical Society

Authors & Affiliations

P. W. Yu and D. C. Reynolds

  • University Research Center, Wright State University, Dayton, Ohio 45435

G. D. Sanders and K. K. Bajaj

  • Department of Electrical and Computer Engineering, Arizona State University, Tempe, Arizona 85287

C. E. Stutz and K. R. Evans

  • Air Force Wright Research and Development Center, Electronic Technology Laboratory (WRDC/ELRA), Wright-Patterson Air Force Base, Ohio 45433

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Vol. 43, Iss. 5 — 15 February 1991

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