Diamagnetic shift in InxGa1xAs/GaAs strained quantum wells

H. Q. Hou, W. Staguhn, S. Takeyama, N. Miura, Y. Segawa, Y. Aoyagi, and S. Namba
Phys. Rev. B 43, 4152 – Published 15 February 1991
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Abstract

Photoluminescence measurements were performed at liquid-helium temperatures at magnetic fields of up to 40 T for InxGa1xAs/GaAs strained quantum wells confined within GaAs layers. The diamagnetic shift was obtained for the samples with different well widths and barrier heights under magnetic fields applied perpendicular and parallel to the well planes. The shift was observed to depend on the well width and barrier height under both configurations of the magnetic field. A model calculation was carried out in a framework of the variational method. The diamagnetic shift was therefore studied as functions of the well width, barrier height, and the magnetic-field configuration experimentally and theoretically; it is found to be a sensitive means to characterize the exciton’s dimensionality. Moreover, an additional confinement by the parallel field was identified with the observation of the emission intensity in the parallel-field configuration.

  • Received 24 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.4152

©1991 American Physical Society

Authors & Affiliations

H. Q. Hou and W. Staguhn

  • The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan

S. Takeyama and N. Miura

  • Institute for Solid State Physics, The University of Tokyo, Roppongi, Tokyo 106, Japan

Y. Segawa, Y. Aoyagi, and S. Namba

  • The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan

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Issue

Vol. 43, Iss. 5 — 15 February 1991

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