Dynamic properties of double-barrier resonant-tunneling structures

L. Y. Chen and C. S. Ting
Phys. Rev. B 43, 2097 – Published 15 January 1991
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Abstract

In this paper we present an approach to the dynamic transport properties of a double-barrier resonant-tunneling system. Based on the nonequilibrium-Green’s-function technique and the Feynman-path-integral theory, the essential ingredients of this microstructure will be properly treated in a self-consistent way: the quantum interference across the structure, the nonequilibrium distribution of tunneling electrons driven by the applied bias voltage, and the effect of reservoirs (electrodes). The transient behavior of the tunneling current, immediately after the switching on of a dc bias voltage, is characterized by the building-up process of tunneling electrons in the quantum well. The novel negative differential conductance demonstrates itself as a function of frequency of the small ac signal superimposed upon a dc bias. The imaginary part of admittance is shown to be related to the conductance via a Kronig-Kramers relation.

  • Received 10 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.2097

©1991 American Physical Society

Authors & Affiliations

L. Y. Chen and C. S. Ting

  • Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5506

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Issue

Vol. 43, Iss. 3 — 15 January 1991

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