Raman scattering by coupled intersubband-Landau-level excitations in quantum-well structures

R. Borroff, R. Merlin, J. Pamulapati, P. K. Bhattacharya, and C. Tejedor
Phys. Rev. B 43, 2081 – Published 15 January 1991
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Abstract

We report on a Raman-scattering investigation of coupled intersubband-Landau-level excitations in GaAs quantum-well structures. Coupling was induced by tilting the magnetic field away from the superlattice axis. The samples were nominally undoped. Carriers at low concentrations (<109 cm2) were generated by means of photoexcitation. Data on various transitions at small tilt angles show very good agreement with results of perturbation theory and, at large angles, with calculations using a finite-basis approximation. Gaps in the excitation spectrum and signatures of the related persisting mixing of levels have been clearly observed. The lowest-lying coupled modes exhibit scaling behavior, following extremely well predictions of the parabolic-well model.

  • Received 6 August 1990

DOI:https://doi.org/10.1103/PhysRevB.43.2081

©1991 American Physical Society

Authors & Affiliations

R. Borroff and R. Merlin

  • The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120

J. Pamulapati and P. K. Bhattacharya

  • Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122

C. Tejedor

  • Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain

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Vol. 43, Iss. 3 — 15 January 1991

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