Determination of the hole effective masses in GaAs from acceptor spectra

State-of-the-art calclations of acceptor energy levels in GaAs show that the currently used hole effective masses are at variance with spectroscopic data on shallow acceptors. These data, as well as most available data from quantum-well spectroscopy and cyclotron resonance, are explained by the set of parameters ${\gamma }_1$=7.10±0.15, ${\gamma }_2$=2.02±0.15, and ${\gamma }_3$=2l91±0.10, which corresponds to a large valence-band anisotropy than reported in interband magneto-optical studies. Values of the acceptors ionization energies are also derived: 26.3, 27.8, 28.2, 30.1, 34.2, and 34.3 meV, for C, Be, Mg, Zn, Si, and Cd, respectively.