Intraband and interband magneto-optics of p-type In0.18Ga0.82As/GaAs quantum wells

R. J. Warburton, R. J. Nicholas, L. K. Howard, and M. T. Emeny
Phys. Rev. B 43, 14124 – Published 15 June 1991
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Abstract

p-type 90-Å In0.18Ga0.82As/GaAs quantum wells with carrier concentrations in the range ps=(1.5–4.3)×1011 cm2 have been studied by magneto-optics. Cyclotron resonance measures the effective mass of the ‖MJ‖=3/2 holes as ≃0.16 for in-plane motion. The mass is light because of the strain decoupling of the ‘‘heavy-hole’’ ‖MJ‖=3/2 and ‘‘light-hole’’ ‖MJ‖=1/2 states. The effective mass has been measured as a function of carrier concentration and field. The totally decoupled limit is not achieved and the residual coupling between the ‖MJ‖=3/2 and 1/2 states is well described by a calculation of the Landau levels using an eight-band kp model. Filling-factor-related anomalies in the cyclotron resonance are observed and interpreted in terms of hole-hole interactions combined with the presence of localizing potentials. Interband photoconductivity measurements determine the conduction-band structure and good agreement with the calculations is achieved. The magnetoexciton binding energy and band filling are considered in the analysis of the interband data.

  • Received 15 January 1991

DOI:https://doi.org/10.1103/PhysRevB.43.14124

©1991 American Physical Society

Authors & Affiliations

R. J. Warburton and R. J. Nicholas

  • Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

L. K. Howard

  • Strained Layer Research Group, University of Surrey, Guildford GU2 5XH, United Kingdom

M. T. Emeny

  • Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom

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Vol. 43, Iss. 17 — 15 June 1991

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