Abstract
We report measurements of the dynamics of localized excitons in GaAs/As multiple-quantum-well structures at low temperature based on stimulated-picosecond-photon-echo measurements. The results show that at low temperature excitons relax by phonon-assisted migration between localization sites and at higher temperatures are thermally activated to delocalized states. The measurements confirm recent theoretical predictions, but show the unexpected presence of additional dephasing.
- Received 26 November 1990
DOI:https://doi.org/10.1103/PhysRevB.43.12658
©1991 American Physical Society