Abstract
A systematic study of the electronic structure at In-δ-doping layers embedded into GaAs or into the well region of AlAs/GaAs quantum wells is presented. The electronic structure is calculated within the framework of a tight-binding scheme using surface Green-function techniques. We describe the Koster-Slater approach to δ doping and discuss the behavior of deep levels induced near the conduction-band edge for single and double δ doping of GaAs with In. It is shown that the trends in level position are connected with the quasi-one-dimensional nature of the Green function near the conduction-band edge. In the case in which the δ-doping layer is arranged inside the GaAs well region of an AlAs/GaAs quantum well, it is shown that the level positions are sensitive to the distance between the δ-doping layer and the interfaces but show no dependence on the changed local electronic structure in GaAs.
- Received 21 December 1990
DOI:https://doi.org/10.1103/PhysRevB.43.12470
©1991 American Physical Society