Extreme g-factor anisotropy induced by strain

Magnetotransport measurements as a function of B-field orientation are studied on p-type strained-layer (001) GaAs/${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the ${\mathit{m}}_{\mathit{j}}$=±3/2 subbands and that the Zeeman splitting between the ${\mathit{m}}_{\mathit{j}}$=3/2 and ${\mathit{m}}_{\mathit{j}}$=-3/2 states of the same Landau level depends on the components of B perpendicular to the strained layer and not the total B. This g-factor anisotropy is shown to be a consequence of the large uniaxial strain in the ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As layer.