Minimum overlayer thickness for interface formation: An experimental study of the Cu/Ag/Cu(111) system

M. A. Mueller, E. S. Hirschorn, T. Miller, and T.-C. Chiang
Phys. Rev. B 43, 11825 – Published 15 May 1991
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Abstract

The evolution of the electronic properties of the boundary between a solid (Ag) and an overlayer (Cu) as a function of the overlayer thickness is examined to yield the characteristic overlayer thickness for interface formation. The boundary properties are probed by measuring the reflection phase shifts of valence electrons using a quantum-well geometry.

  • Received 8 January 1991

DOI:https://doi.org/10.1103/PhysRevB.43.11825

©1991 American Physical Society

Authors & Affiliations

M. A. Mueller, E. S. Hirschorn, T. Miller, and T.-C. Chiang

  • Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
  • Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801

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Vol. 43, Iss. 14 — 15 May 1991

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